(PDF) RLT785-100MGS Datasheet - Infrared Laser Diode

Número de pieza	RLT785-100MGS
Descripción	Infrared Laser Diode
Fabricantes	Roithner
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No Preview Available ! RLT785-100MGS v 1.1 29.01.2015 Description RLT785-100MGS is a single mode Laser Diode emitting at typical 785 nm with rated output power of 100 mW CW at room temperature. The 5.6 mm TO package includes a cap and flat window, and contains a built-in monitor PD. Maximum Ratings (TCASE=25°C) Parameter Symbol Forward Current Reverse Voltage Operating Temperature Storage Temperature Lead Solder Temperature 2 1 must be completed within 5 seconds IF VF TCASE TSTG TSLD Min. - 10 - 40 Electro-Optical Characteristics (TCASE=25°C) Values Max. 2.0 + 70 + 85 + 280 Unit mA V °C °C °C Parameter Peak Wavelength Half Width Optical Output Power (CW Mode) Optical Output Power (Pulse Mode ) 1 Laser Beam Mode Threshold Current Forward Current Forward Voltage Slope Efficiency Beam Divergence Beam Divergence Monitor Current PD Reverse Voltage 1 duty=50%, pulse width = 0.5 µs Symbol λP ∆λ PO PO ITH IOP VOP η ӨII Ө┴ IM VPDR Min. 775 7 15 Values Typ. 785 2.0 100 220 Single Mode 35 140 2.0 1.1 9 17 0.5 30 Max. 795 55 160 2.5 1.3 10 19 0.8 Unit nm nm mW mW mA mA V mW/mA ° ° mA V www.roithner-laser.com 1 1 page

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PDF RLT785-100MGS Data sheet ( Hoja de datos )