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PDF ADL-78901SX Data sheet ( Hoja de datos )
| Número de pieza | ADL-78901SX | |
| Descripción | Laser Diode | |
| Fabricantes | ETC | |
| Logotipo |  |
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AlGaAs Infrared Laser Diode ADL-78901SX
3.3mm Mini Package!
200mW High Power Reliable Operation
• Features
1. Smallest package
2. Low operating current
3. Small aspect ratio
4. High COD level
• Applications
1. Virtual keyboard
2. Super slim 40X CD-R/RW OPU
• Absolute maximum ratings
Parameter
Symbol Condition
Light output power
PO CW
Pop Pulsed*
Reverse voltage(LD)
Case temperature
Storage temperature
VRL
TC
TS
-
-
-
* Pulse width 0.5us, duty cycle 50%
Rating
100
220
2
-10~+70
-40~+85
Unit
mW
V
oC
oC
• Electrical and optical characteristics (Tc=25 oC)
Parameter
Symbol Min. Typ.
Peak wavelength
775 785
Threshold current
Operating current
Operating voltage
Differential efficiency
Ith 25 35
Iop 90 115
Vop 1.5 2
0.8 1.1
Parallel divergence angle
89
Perpendicular divergence angle
15 17
Parallel FFP deviation angle
--
Perpendicular FFP deviation angle
--
Emission point accuracy
xyz
-
-
Max.
795
55
160
2.2
1.3
10
19
2
3
80
Unit Conditions (CW)
nm
mA
Po=90mW
mA
V
mW/mA Po=88-90mW
deg
deg
deg Po=90mW
deg
um
Precautions
1. Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device.
2. Semiconductor laser device is very sensitive to electrostatic discharge. High voltage spike current may change the characteristics of the device, or malfunction at any time during
its service period. Therefore, proper measures for preventing electrostatic discharge are strongly recommended.
3. Effective heat sink can help the device operates under a more relax condition; as a result, a more stable characteristics and better reliability can be achieved. So it is
recommended that always apply proper heat sink before the device is operating.
4. Do not look into the laser beam directly by bare eyes. The laser beam may cause severe damage to human eyes.
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