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INCHANGE - Silicon PNP Power Transistor

Numéro de référence 2SB1038
Description Silicon PNP Power Transistor
Fabricant INCHANGE 
Logo INCHANGE 





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2SB1038 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
·Complement to Type 2SD1310
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-5 A
IB Base Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.6 A
30 W
150
-55~150
Product Specification
2SB1038
isc websitewww.iscsemi.cn
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