|
|
Numéro de référence | 2SB1038 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | INCHANGE | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
·Complement to Type 2SD1310
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60 V
VCEO Collector-Emitter Voltage
-60 V
VEBO Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-3 A
ICM Collector Current-Peak
-5 A
IB Base Current-Continuous
PC
Total Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-0.6 A
30 W
150 ℃
-55~150 ℃
Product Specification
2SB1038
isc website:www.iscsemi.cn
1
|
|||
Pages | Pages 2 | ||
Télécharger | [ 2SB1038 ] |
No | Description détaillée | Fabricant |
2SB1030 | Silicon PNP epitaxial planer type(For low-frequency amplification) | Panasonic Semiconductor |
2SB1030A | Silicon PNP epitaxial planer type(For low-frequency amplification) | Panasonic Semiconductor |
2SB1031 | LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K | Hitachi Semiconductor |
2SB1031K | LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K | Hitachi Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |