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PDF VS-GT400TH60N Data sheet ( Hoja de datos )
| Número de pieza | VS-GT400TH60N | |
| Descripción | Molding Type Module IGBT | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-GT400TH60N
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 600 V and 400 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C
VCE(on) (typical)
at IC = 400 A, 25 °C
Package
Circuit
600 V
400 A
1.60 V
Double INT-A-PAK
Half bridge
FEATURES
• Low VCE(on) trench IGBT technology
• Low switching losses
• 5 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Speed: 0 kHz to 20 kHz
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Gate to emitter voltage
VGES
Collector current
Pulsed collector current
IC
ICM (1)
TC = 25 °C
TC = 80 °C
tp = 1 ms
Diode continuous forward current
IF
Diode maximum forward current
IFM
Maximum power dissipation
PD TJ = 175 °C
Short circuit withstand time
tSC TJ = 125 °C
I2t-value, diode
I2t VR = 0 V, t = 10 ms, TJ = 125 °C
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: Pulse width limited by maximum junction temperature.
MAX.
600
± 20
530
400
800
400
800
1600
5
10 900
2500
UNITS
V
A
W
μs
A2s
V
Revision: 03-Jul-14
1 Document Number: 93488
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GT400TH60N
Vishay Semiconductors
8
7
6
5 Erec
4
3
2
1
0
0 2 4 6 8 10 12
93488_09
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Gate Resistance
VCC = 600 V, IC = 400 A, VGE = - 15 V, TJ = 125 °C
1
0.1 Diode
0.01
0.001
0.001
93488_10
CIRCUIT CONFIGURATION
0.01 0.1
1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
12
6
7
3
5
4
10
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95525
Revision: 03-Jul-14
5 Document Number: 93488
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VS-GT400TH60N.PDF ] | |
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