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PDF VS-GB100TS60NPbF Data sheet ( Hoja de datos )
| Número de pieza | VS-GB100TS60NPbF | |
| Descripción | Ultrafast Speed IGBT | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VS-GB100TS60NPbF
Vishay Semiconductors
INT-A-PAK “Half-Bridge”
(Ultrafast Speed IGBT), 108 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 100 A, 25 °C
Speed
Package
Circuit
600 V
108 A
2.6 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: optimized for hard switching speed
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
Operating junction temperature range
Storage temperature range
VISOL
TJ
TStg
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
108
74
200
200
106
69
± 20
390
219
2500
-40 to +150
-40 to +150
UNITS
V
A
V
W
V
°C
Revision: 10-Jun-15
1 Document Number: 94501
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB100TS60NPbF
Vishay Semiconductors
90 10
80
Ic = 100A
70 1 Ic = 50A
Ic = 25A
60
50
600
800 1000 1200 1400 1600 1800
dIF / dt (A/μs)
Fig. 13 - Typical Diode Irr vs. dIF/dt,
TJ = 125 °C, VCC = 360 V, IF = 150 A, VGE = 15 V
9
8
7
6
5
4
3
2
1
0 10 20 30 40 50
RG (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
TJ = 125 °C, L = 200 μH, Rg = 10 ,
VCC = 360 V, VGE = 15 V
1
0.1
0
25 50 75 100 125
TJ - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs. Junction Temperature,
L = 200 μH, Rg = 10 , VCC = 360 V, VGE = 15 V
2.5
2
1.5
1
0.5
0
20
40 60
IC (A)
80
100
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current,
TJ = 125 °C, Rg1 = 4.7 V, Rg2 = 0 , VCC = 360 V, VGE = 15 V
D = 0.5
0.1
0.01
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t1 , Rectangular Pulse Duration (sec)
Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Revision: 10-Jun-15
5 Document Number: 94501
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-GB100TS60NPbF.PDF ] | |
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