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PDF VS-70MT060WHTAPbF Data sheet ( Hoja de datos )
| Número de pieza | VS-70MT060WHTAPbF | |
| Descripción | IGBT MTP | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-70MT060WHTAPbF
Vishay Semiconductors
“Half Bridge” IGBT MTP (Warp 2 Speed IGBT), 70 A
MTP
PRODUCT SUMMARY
VCES
VCE(on) typical at VGE = 15 V
IC at TC = 78 °C
Package
Circuit
600 V
2.1 V
70 A
MTP
Half bridge
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• SMD thermistor (NTC)
• Al2O3 BDC
• Very low stay inductance design for high speed operation
• UL pending
• Speed 60 kHz to 150 kHz
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Lower coduction losses and switching losses
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
IF
IFM
VGE
VISOL
Maximum power dissipation, IGBT
PD
TEST CONDITIONS
TC = 25 °C
TC = 78 °C
TC = 78 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
MAX.
600
100
70
300
300
53
200
± 20
2500
347
139
UNITS
V
A
V
W
Revision: 30-Oct-13
1 Document Number: 94469
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
4.5
4.0
25 °C
3.5
125 °C
3.0
2.5
0.1
1.0
94469_07
IC (mA)
Fig. 7 - Typical Gate Threshold Voltage
1400
1200
1000
800
Eon
600
Eoff
400
200
0
0 20 40 60 80
94469_08
IC - Collector to Emitter Current (A)
Fig. 8 - Typical Energy Losses vs. IC ( TJ = 150 °C)
1000
100
tf
td(off)
tr
td(on)
10
0
20 40 60 80
94469_09
IC - Collector to Emitter Current (A)
Fig. 9 - Switching Time vs. IC
VS-70MT060WHTAPbF
Vishay Semiconductors
350
300
250
200
150
100
50
0
0 100 200 300 400 500 600 700
94469_10
IC - Collector to Emitter Voltage (V)
Fig. 10 - Reverse BIAS SOA, TJ = 150 °C
160
VR = 200 V
140
IF = 70 A, 125 °C
120
100
IF = 70 A, 25 °C
80
60
100
1000
94469_11
dIF/dt (A/µs)
Fig. 11 - Typical Reverse Recovery Time vs. dIF/dt
40
VR = 200 V
35
30
25
IF = 70 A, 125 °C
20
15
IF = 70 A, 25 °C
10
5
100
1000
94469_12
dIF/dt (A/μs)
Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt
Revision: 30-Oct-13
5 Document Number: 94469
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-70MT060WHTAPbF.PDF ] | |
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