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PDF VS-GB70NA60UF Data sheet ( Hoja de datos )
| Número de pieza | VS-GB70NA60UF | |
| Descripción | IGBT | |
| Fabricantes | Vishay | |
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www.vishay.com
VS-GB70NA60UF
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Warp 2 Speed IGBT), 70 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 70 A, 25 °C
IF DC
Package
Circuit
600 V
70 A at 88 °C
2.23 V
70 A at 86 °C
SOT-227
Chopper high side switch
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• Low VCE(on)
• FRED Pt® hyperfast rectifier
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
TC = 25 °C
IC
TC = 80 °C
Pulsed collector current
ICM
Clamped inductive load current
ILM
Diode continuous forward current
TC = 25 °C
IF
TC = 80 °C
Peak diode forward current
IFM
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
111
76
120
120
113
75
200
± 20
447
250
236
132
2500
UNITS
V
A
V
W
V
Revision: 02-Aug-13
1 Document Number: 93103
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB70NA60UF
Vishay Semiconductors
170
145
TJ = 125 °C
120
95
70 TJ = 25 °C
45
20
100
1000
dIF/dt (A/µs)
Fig. 11 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
30
25
20
TJ = 125 °C
15
10
5 TJ = 25 °C
0
100
1000
dIF/dt (A/µs)
Fig. 12 - Typical Irr Diode vs. dIF/dt
VRR = 200 V, IF = 50 A
1250
1050
850
TJ = 125 °C
650
450
250 TJ = 25 °C
50
100
1000
dIF/dt (A/µs)
Fig. 13 - Typical Qrr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
1
0.1
0.01
0.001
0.00001
D = 0.50
D = 0.20
DC
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
10
Fig. 14 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
100
Revision: 02-Aug-13
5 Document Number: 93103
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-GB70NA60UF.PDF ] | |
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