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PDF VS-GT175DA120U Data sheet ( Hoja de datos )
| Número de pieza | VS-GT175DA120U | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay | |
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VS-GT175DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 175 A
SOT-227
PRODUCT SUMMARY
VCES
IC(DC)
VCE(on) typical at 100 A, 25 °C
IF(DC)
Package
Circuit
1200 V
175 A at 90 °C (1)
1.73 V
32 A at 90 °C
SOT-227
Single Switch Diode
Note
(1) Maximum collector current admitted is 100 A, to not exceed the
maximum temperature of terminals
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery
• TJ maximum = 150 °C
• Fully isolated package
• Speed 4 kHz to 30 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Very low VCE(on)
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
TC = 25 °C
TC = 90 °C
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
TC = 25 °C
IF
TC = 90 °C
Gate to emitter voltage
Power dissipation, IGBT
VGE
TC = 25 °C
PD
TC = 90 °C
Power dissipation, diode
Isolation voltage
PD
VISOL
TC = 25 °C
TC = 90 °C
Any terminal to case, t = 1 min
Note
(1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals
MAX.
1200
288
175
450
450
54
32
± 20
1087
522
219
105
2500
UNITS
V
A
V
W
V
Revision: 13-Sep-13
1 Document Number: 93990
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
40
30
Eon
20 Eoff
10
0
0 10
20 30 40 50
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 75 A, L = 500 μH, VCC = 600 V, VGE = 15 V
Diode used: HFA16PB120
10
td(on)
1 td(off)
tr
0.1 tf
0.01
0 10 20 30 40 50 60
Rg (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V, IC = 75 A, VGE = 15 V
Diode used: HFA16PB120
VS-GT175DA120U
Vishay Semiconductors
310
290
270
250
230
210
190
170
150
130
110
90
100
TJ = 25 °C
TJ = 125 °C
1000
dIF/dt (A/μs)
Fig. 13 - Typical Reverse Recovery Time vs. dIF/dt, of Diode,
at IF = 50 A, VR = 400 V
3000
2500
2000
TJ = 125 °C
1500
1000
500
TJ = 25 °C
0
100
1000
dIF/dt (A/μs)
Fig. 14 - Typical Stored Charge vs. dIF/dt of Diode,
at IF = 50 A, VR = 400 V
45
40
35
30
25 TJ = 125 °C
20
15 TJ = 25 °C
10
5
0
100
1000
dIF/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt, of Diode,
at IF = 50 A, VR = 400 V
Revision: 13-Sep-13
5 Document Number: 93990
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet VS-GT175DA120U.PDF ] | |
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