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PDF VS-GB90DA120U Data sheet ( Hoja de datos )
| Número de pieza | VS-GB90DA120U | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay | |
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VS-GB90DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 90 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 75 A, 25 °C
Package
Circuit
1200 V
90 A at 90 °C
3.3 V
SOT-227
Single switch diode
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
VCES
IC (1)
ICM
ILM
IF
TC = 25 °C
TC = 90 °C
TC = 25 °C
TC = 90 °C
Gate to emitter voltage
VGE
Power dissipation, IGBT
TC = 25 °C
PD
TC = 90 °C
Power dissipation, diode
TC = 25 °C
PD
TC = 90 °C
Isolation voltage
VISOL
Any terminal to case, t = 1 min
Note
(1) Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals
MAX.
1200
149
90
200
200
76
46
± 20
862
414
357
171
2500
UNITS
V
A
V
W
V
Revision: 02-Aug-13
1 Document Number: 94722
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-GB90DA120U
Vishay Semiconductors
14
12 Eon
10
8 Eoff
6
4
2
0
0 10 20 30 40 50
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg,
TJ = 125 °C, IC = 75 A, L = 500 μH,
VCC = 600 V, VGE = 15 V, Diode used HFA16PB120
10 000
1000
100
td(on)
td(off)
tf
tr
10
0
10 20 30 40 50
RG (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
300
250
125 °C
VR = 200 V
IF = 50 A
200
25 °C
150
100
50
100
1000
dIF/dt (A/μs)
Fig. 13 - Typical trr Diode vs. dIF/dt
VRR = 200 V, IF = 50 A
3000
2500
VR = 200 V
IF = 50 A
2000
1500
1000
125 °C
25 °C
500
100
1000
dIF/dt (A/μs)
Fig. 14 - Stored Charge vs. dIF/dt of Diode
40
35
VR = 200 V
IF = 50 A
30
25
125 °C
20
15
25 °C
10
5
100
1000
dIF/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt of Diode
Revision: 02-Aug-13
5 Document Number: 94722
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet VS-GB90DA120U.PDF ] | |
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