VS-HFA180NH40PbF Datasheet PDF - Vishay
| Part Number | VS-HFA180NH40PbF | |
| Description | Ultrafast Soft Recovery Diode | |
| Manufacturers | Vishay | |
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VS-HFA180NH40PbF
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 180 A
HALF-PAK (D-67)
Lug terminal
anode
Base
cathode
FEATURES
• Very low Qrr and trr
• Designed and qualified for industrial level
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
PRODUCT SUMMARY
IF(AV)
VR
IF(DC) at TC
Package
Circuit
180 A
400 V
200 A at 100 °C
HALF-PAK (D-67)
Single diode
DESCRIPTION
HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dIF/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF
Single pulse forward current
Non-repetitive avalanche energy
IFSM
EAS
Maximum power dissipation
PD
Operating junction and storage
temperature range
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
Limited by junction temperature
L = 100 μH, duty cycle limited by maximum TJ
TC = 25 °C
TC = 100 °C
MAX.
400
395
200
1200
1.4
657
263
-55 to +150
UNITS
V
A
mJ
W
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
VBR IR = 100 μA
IF = 180 A
Maximum forward voltage
VFM IF = 360 A
See fig. 1
Maximum reverse
leakage current
IF = 180 A, TJ = 125 °C
IRM TJ = 125 °C, VR = 400 V
See fig. 2
Junction capacitance
CT VR = 200 V
See fig. 3
Series inductance
LS From top of terminal hole to mounting plane
MIN.
400
-
-
-
-
-
-
TYP.
-
1.08
1.22
0.99
-
370
6.0
MAX.
-
1.46
1.8
1.34
4
500
-
UNITS
V
mA
pF
nH
Revision: 02-Apr-14
1 Document Number: 94061
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
| |
 
www.vishay.com
VS-HFA180NH40PbF
Vishay Semiconductors
D.U.T.
Current
monitor
L = 100 µH
Rg = 25 Ω
High-speed
switch
Freewheel
diode
+
Vd = 50 V
IL(PK)
V(AVAL)
VR(RATED)
Decay
time
Fig. 12 - Avalanche Test Circuit and Waveforms
ORDERING INFORMATION TABLE
Device code VS- HFA 180 N H 40 PbF
1 2 3 456 7
1 - Vishay Semiconductors product
2 - HEXFRED® family, electron irradiated
3 - Average current rating
4 - N = Not isolated
5 - H = HALF-PAK
6 - Voltage rating (400 V)
7 - Lead (Pb)-free
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95020
Revision: 02-Apr-14
5 Document Number: 94061
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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