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PDF VS-HFA140FA60 Data sheet ( Hoja de datos )
| Número de pieza | VS-HFA140FA60 | |
| Descripción | Ultrafast Soft Recovery Diode | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-HFA140FA60
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 140 A
SOT-227
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VR
VF (typical)
trr (typical)
IF(DC) at TC, per module
IF(AV) at TC, per module
Package
600 V
1.33 V
43 ns
140 A at 110 °C
140 A at 96 °C
SOT-227
DESCRIPTION/APPLICATIONS
The dual diode series configuration VS-HFA140FA60 is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as power supplies, battery chargers electronic welders,
motor control and inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
Continuous forward current
per leg
per module
VR
IF
Single pulse forward current
IFSM
Maximum power dissipation, per leg
PD
RMS isolation voltage
Operating junction and storage
temperature range
VISOL
TJ, TStg
TEST CONDITIONS
TC = 110 °C
TJ = 25 °C
TC = 25 °C
TC = 110 °C
Any terminal to case, t = 1 minute
MAX.
600
70
140
600
357
114
2500
- 55 to 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR IR = 100 μA
600
IF = 60 A
-
Forward voltage, per leg
IF = 120 A
VFM
IF = 60 A, TJ = 125 °C
-
-
IF = 60 A, TJ = 150 °C
-
VR = VR rated
-
Reverse leakage current, per leg
IRM
TJ = 125 °C, VR = VR rated
-
TJ = 150 °C, VR = VR rated
-
TYP.
-
1.33
1.56
1.24
1.19
2.5
0.8
3
MAX.
-
1.70
2.04
-
-
20
2
9
UNITS
V
μA
mA
Revision: 23-Jul-13
1 Document Number: 93992
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-HFA140FA60
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 11 - Reverse Recovery Waveform and Definitions
Revision: 23-Jul-13
5 Document Number: 93992
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet VS-HFA140FA60.PDF ] | |
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