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PDF VS-303CNQ100PbF Data sheet ( Hoja de datos )

Número de pieza VS-303CNQ100PbF
Descripción High Performance Schottky Rectifiers
Fabricantes Vishay 
Logotipo Vishay Logotipo



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www.vishay.com
VS-303CNQ100PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 300 A
Lug
terminal
anode 1
Lug
terminal
anode 2
TO-244
Base common
cathode
PRODUCT SUMMARY
IF(AV)
VR
Package
Circuit
300 A
100 V
TO-244
Two diodes common cathode
FEATURES
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-303CNQ... center tap Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 150 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
300
100
22 000
0.72
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage VRWM
VS-303CNQ100PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
50 % duty cycle at TC = 138 °C, rectangular waveform
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
IFSM
EAS
IAR
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 13 A, L = 0.2 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
150
300
22 000
2500
15
1
UNITS
A
mJ
A
Revision: 26-Mar-14
1 Document Number: 94177
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-303CNQ100PbF pdf
DIMENSIONS in millimeters (inches)
TO-244
13 (0.51)
35 (1.37) REF.
80 (3.15)
Outline Dimensions
Vishay Semiconductors
7 (0.27)
6 (0.23)
17.5 (0.69)
16.5 (0.65)
3
12.6 (0.5)
1
Ø 5.2 (Ø 0.20)
2
3
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Document Number: 95021
Revision: 25-Jun-07
For technical questions, contact: [email protected]
www.vishay.com
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