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PDF VS-301CNQ045PbF Data sheet ( Hoja de datos )
| Número de pieza | VS-301CNQ045PbF | |
| Descripción | High Performance Schottky Rectifiers | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-301CNQ...PbF Series
Vishay Semiconductors
High Performance Schottky Rectifier, 300 A
Lug
terminal
anode 1
Lug
terminal
anode 2
TO-244
Base common
cathode
PRODUCT SUMMARY
IF(AV)
VR
Package
Circuit
300 A
40 V, 45 V
TO-244
Two diodes common cathode
FEATURES
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-301CNQ... center tap Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
Range
tp = 5 μs sine
VF 150 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
300
40/45
16 000
0.59
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage VRWM
VS-301CNQ040PbF
40
VS-301CNQ045PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 132 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 21 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
150
300
16 000
3200
202
30
UNITS
A
mJ
A
Revision: 26-Mar-14
1 Document Number: 94176
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
DIMENSIONS in millimeters (inches)
TO-244
13 (0.51)
35 (1.37) REF.
80 (3.15)
Outline Dimensions
Vishay Semiconductors
7 (0.27)
6 (0.23)
17.5 (0.69)
16.5 (0.65)
3
12.6 (0.5)
1
Ø 5.2 (Ø 0.20)
2
3
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Document Number: 95021
Revision: 25-Jun-07
For technical questions, contact: [email protected]
www.vishay.com
1
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