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PDF VS-123NQ100PbF Data sheet ( Hoja de datos )
| Número de pieza | VS-123NQ100PbF | |
| Descripción | High Performance Schottky Rectifiers | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-123NQ100PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 120 A
Lug terminal
anode
HALF-PAK (D-67)
Base
cathode
PRODUCT SUMMARY
IF(AV)
VR
Package
Circuit
120 A
100 V
HALF-PAK (D-67)
Single diode
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-123NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF 120 Apk, TJ = 125 °C
TJ Range
VALUES
120
100
12 800
0.73
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-123NQ100PbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 133 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
Following any rated
IFSM load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
120
12 800
1800
15
1
UNITS
A
A
mJ
A
Revision: 01-Apr-14
1 Document Number: 94129
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
D-67 HALF-PAK
DIMENSIONS in millimeters (inches)
24.4 (0.96)
13 (0.51)
Outline Dimensions
Vishay Semiconductors
30 ± 0.05
(1.2 ± 0.002)
5 (0.196) + 45°
5 (0.20)
4 (0.16)
Ø 7.3 ± 0.1 (0.29 ± 0.0039)
17.5 (0.69)
16.5 (0.65)
Ø 4.3
- 0.1
0.0
(Ø 0.169 - 00..000040)
¼" - 20 UNC
40 MAX. (1.58)
21 (0.82)
20 (0.78)
Document Number: 95020
Revision: 20-May-09
For technical questions, contact: [email protected]
www.vishay.com
1
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