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PDF SBD20C100F Data sheet ( Hoja de datos )
| Número de pieza | SBD20C100F | |
| Descripción | 100V SCHOTTKY RECTIFIER | |
| Fabricantes | Silan Microelectronics | |
| Logotipo |  |
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SBD20C100T/F_Datasheet
20A, 100V SCHOTTKY RECTIFIER
GENERAL DESCRIPTION
SBD20C100T/F is schottky rectifier fabricated in silicon epitaxial
planar technology. Typical applications are in switching power
supplies and protection circuit etc.
FEATURES
∗ Guard ring for Stress Protection
∗ High Surge Capacity
∗ Low power loss , high efficiency
∗ Low forward voltage drop
ORDERING SPECIFICATIONS
Part No.
SBD20C100T
SBD20C100F
Package
TO-220-3L
TO-220F-3L
Marking
SBD20C100T
SBD20C100F
Material
Pb free
Pb free
Packing
Tube
Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge [email protected]
Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Value
100
20
150
150
-40~150
Unit
V
A
A
°C
°C
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Symbol
RθJC
Value
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Parameter
Forward Voltage
Symbol
VF
Reverse Current
IR
Test conditions
IF=10A (TC=25°C)
IF=10A(TC=125°C)
VR=100V(TC=25°C)
VR=100V(TC=125°C)
Min.
--
--
--
--
Max.
0.85
0.75
50
25
Unit
V
V
μA
mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.10.22
Page 1 of 7
1 page  
PACKAGE OUTLINE(continued)
TO-220F-3L(2)
SBD20C100T/F_Datasheet
UNIT: mm
TO-220F-3L(3)
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.10.22
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SBD20C100F.PDF ] | |
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