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PDF FX855 Data sheet ( Hoja de datos )
| Número de pieza | FX855 | |
| Descripción | DC-DC Converter Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FX855 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Ordering number:EN4895
FX855
MOSFET:N-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type composed of a ow ON-resistance N-
channel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates high-
density mounting.
· The FX855 is formed with 2 chips, one being
equivalent to the 2SK1470 and the other the SB05-
09, placed in one package.
Package Dimensions
unit:mm
2119
[FX855]
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
Specifications
(Top view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VDSS
VGSS
ID
IDP
PD
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25˚C
Mounted on ceramic board (750mm2×0.8mm)
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
· Marking:855
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
Ratings
Unit
60
±15
2
8
6
1.5
150
–55 to +150
V
V
A
A
W
W
˚C
˚C
90
95
500
10
–55 to +125
–55 to +125
V
V
mA
A
˚C
˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095TS (KOTO) TA-0115 No.4895-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FX855.PDF ] | |
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