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Numéro de référence | IRG4BH20K-L | ||
Description | INSULATED GATE BIPOLAR TRANSISTOR | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD -93961
IRG4BH20K-L
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Industry standard TO-262 package
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.17V
@VGE = 15V, IC = 5.0A
TO-262
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Max.
1200
11
5.0
22
22
10
±20
130
60
24
-55 to +150
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
8/17/00
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Pages | Pages 8 | ||
Télécharger | [ IRG4BH20K-L ] |
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