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C2551 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba - 2SC2551

شماره قطعه C2551
شرح مفصل 2SC2551
تولید کننده Toshiba 
آرم Toshiba 





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C2551 شرح
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2551
2SC2551
Hight Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Industrial Applications
Unit: mm
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 3 pF (typ.)
Complementary to 2SA1091.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
300
300
6
100
20
400
150
55~150
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 300 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CBO IC = 0.1 mA, IE = 0
V (BR) CEO IC = 1 mA, IB = 0
hFE (1)
(Note)
VCE = 10 V, IC = 20 mA
hFE (2)
VCE = 10 V, IC = 1 mA
VCE (sat) IC = 20 mA, IB = 2 mA
VBE (sat) IC = 20 mA, IB = 2 mA
fT VCE = 10 V, IC = 20 mA
Cob VCB = 20 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 30~90, O: 50~150
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
300
V
300
V
30 150
20 ⎯ ⎯
⎯ ⎯ 0.5 V
⎯ ⎯ 1.2 V
50 80 MHz
3
4 pF
1 2007-11-01

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