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FX70SMJ-03 fiches techniques PDF

Powerex Power Semiconductors - Pch POWER MOSFET HIGH-SPEED SWITCHING USE

Numéro de référence FX70SMJ-03
Description Pch POWER MOSFET HIGH-SPEED SWITCHING USE
Fabricant Powerex Power Semiconductors 
Logo Powerex Power Semiconductors 





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FX70SMJ-03 fiche technique
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
FX70SMJ-03
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9 max
4
φ 3.2
Dimensions in mm
4.5
1.5
2
1.0
1 23
5.45 5.45
G
0.6
4.4
2.8
4V DRIVE
VDSS ............................................................... –30V
rDS (ON) (MAX) ............................................. 12.3m
ID .................................................................... –70A
Integrated Fast Recovery Diode (TYP.) ...........70ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
4
3
1 GATE
1 2 DRAIN
3 SOURCE
4 DRAIN
24
TO-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
–30
±20
–70
–280
–70
–70
–280
150
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999

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