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Numéro de référence | FX70SMJ-03 | ||
Description | HIGH-SPEED SWITCHING USE | ||
Fabricant | Mitsubishi Electric Semiconductor | ||
Logo | |||
1 Page
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FX70SMJ-03
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9 max
4
φ 3.2
Dimensions in mm
4.5
1.5
2
1.0
1 23
5.45 5.45
G
0.6
4.4
2.8
• 4V DRIVE
• VDSS ............................................................... –30V
• rDS (ON) (MAX) ............................................. 12.3mΩ
• ID .................................................................... –70A
• Integrated Fast Recovery Diode (TYP.) ...........70ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
4
3
1 GATE
1 2 DRAIN
3 SOURCE
4 DRAIN
24
TO-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
–30
±20
–70
–280
–70
–70
–280
150
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
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Pages | Pages 4 | ||
Télécharger | [ FX70SMJ-03 ] |
No | Description détaillée | Fabricant |
FX70SMJ-03 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
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