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FX6KMJ-2 fiches techniques PDF

Powerex Power Semiconductors - Pch POWER MOSFET HIGH-SPEED SWITCHING USE

Numéro de référence FX6KMJ-2
Description Pch POWER MOSFET HIGH-SPEED SWITCHING USE
Fabricant Powerex Power Semiconductors 
Logo Powerex Power Semiconductors 





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FX6KMJ-2 fiche technique
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
FX6KMJ-2
MITSUBISHI Pch POWER MOSFET
FX6KMJ-2
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
4V DRIVE
VDSS ............................................................. –100V
rDS (ON) (MAX) ................................................ 0.58
ID ...................................................................... –6A
Integrated Fast Recovery Diode (TYP.) ...........80ns
Viso ................................................................................ 2000V
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
123
3
1 GATE
1 2 DRAIN
3 SOURCE
2
TO-220FN
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
L = 100µH
Conditions
AC for 1minute, Terminal to case
Typical value
Ratings
–100
±20
–6
–24
–6
–6
–24
20
–55 ~ +150
–55 ~ +150
2000
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
V
g
Jan.1999

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