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PDF 2SB1462L Data sheet ( Hoja de datos )
| Número de pieza | 2SB1462L | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
2SB1462L
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD2216L
32
Unit: mm
0.020±0.010
I Features
• High foward current transfer ratio hFE
• Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
−60
−50
−7
−200
−100
150
125
−55 to +125
Note) *: Printed circuit board copper foil for collector portion
area: 20.0 mm2 or more, thickness: 1.6 mm
Unit
V
V
V
mA
mA
mW
°C
°C
4
1.00±0.05
1
0.60±0.05
41
3
0.30±0.03
Marking Symbol: J
2
0.05±0.03
0.60
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
VCE(sat)
Cob
fT
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
IC = −10 µA, IE = 0
IC = −100 µA, IB = 0
IE = −10 µA, IC = 0
VCE = −10 V, IC = −2 mA
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 0, f = 1 MHz
VCB = −10 V, IE = 1 mA, f = 200 MHz
−60
−50
−7
180
Typ Max
− 0.1
−100
− 0.3
2.7
80
390
− 0.5
Unit
µA
µA
V
V
V
V
pF
MHz
1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB1462L.PDF ] | |
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