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DA3DF30A fiches techniques PDF

Panasonic - Silicon epitaxial planar type

Numéro de référence DA3DF30A
Description Silicon epitaxial planar type
Fabricant Panasonic 
Logo Panasonic 





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DA3DF30A fiche technique
This product complies with the RoHS Directive (EU 2002/95/EC).
DA3DF30A
Silicon epitaxial planar type
For high frequency rectication
Features
Short reverse recovery time trr
Soft recovery
Packaging
Tray : 50 pcs
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
350
V
Non-repetitive peak reverse surge voltage
VRSM
350
V
Forward current
IF 20
Non-repetitive peak forward surge current *1 IFSM 100
Repetitive peak forward current *2
IFRM
150
A
A
A
Junction temperature
Tj 150 °C
Storage temperature
Tstg –40 to +150 °C
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
*2: Pulse width < 10 ms. Peak value of the sine wave. (If repeative, RMS current < 20 A)
Package
Code
TO-220D-A1
Pin Name
1: Anode
2: Cathode
3: Anode
Marking Symbol: DAF30A
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Forward voltage
VF IF = 20 A
1.2 1.4
Repetitive peak reverse current
Reverse recovery time *
Thermal resistance (j-c)
IRRM
trr
Rth(j-c)
VRRM = 350 V
IF = 0.5 A, VR = 1.0 V, Irr = 0.25 A 
10
12 25
4.0
Thermal resistance (j-a)
Rth(j-a)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz
3. *: trr measurement circuit
63
50
50
trr
D.U.T.
IF
5.5
0.25 × IR
IR
Unit
V
mA
ns
°C/W
°C/W
Publication date: July 2011
Ver. AED
1

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