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Fairchild Semiconductor - N-Channel Power MOSFETs

Numéro de référence RF1S630SM
Description N-Channel Power MOSFETs
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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RF1S630SM fiche technique
Data Sheet
IRF630, RF1S630SM
January 2002
9A, 200V, 0.400 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17412.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF630
TO-220AB
IRF630
RF1S630SM
TO-263AB
RF1S630
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S630SM9A.
Features
• 9A, 200V
• rDS(ON) = 0.400
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
IRF630, RF1S630SM Rev. B

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