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Numéro de référence | F2N60 | ||
Description | N-CHANNEL POWER MOSFET | ||
Fabricant | SI Semiconductors | ||
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1 Page
Shenzhen SI Semiconductors Co., LTD.
N-CHANNEL POWER MOSFET
Product Specification
F2N60
FEATURES LOW THERMAL RESISTANCE REPETITIVE AVALANCHE RATED FAST SWITCHING
APPLICATION: ELECTRONIC BALLAST
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
Absolute Maximum Ratings Tc=25°C
PARAMETER
SYMBOL VALUE
Drain-source Voltage VDS 600
Drain-gate Voltage VGS 20
Continuous Drain Current
TC=25
ID
2.4
Continuous Drain Current
TC=100
ID
1.5
Total Dissipation
Junction Temperature
Storage Temperature
PD
Tj
TSTG
64
150
-55-150
TO-220
UNIT
V
V
A
A
W
°C
°C
VDS=600V
RDS(ON)=4.7Ω
ID=2.4A
1-GATE 2-DRAIN 3-SOURCE
Electronic Characteristics
ChARACTERISTICS
Drain-source Breakdown
Voltage
Gate Threshold Voltage
Tc=25°C
SYMBOL
BVDSS
VGS(TH)
Drain-source Leakage Current
IDSS
On State Drain Current
Gate-body Leakage
Current (VDS = 0)
Static Drain-source On
Resistance
Thermal Resistance
Junction-case
ID(ON)
IGSS
RDS(ON)
R Jc
TEST CONDITION
VGS=0V, ID=250µA
VGS= VDS,ID=250µA
VDS =Rated BVDSS,
VGS =0V
VDS =0.8RatedBVDSS,
VGS =0V TJ=125°C
VDS ID(ON) rDS(ON)MAX,
VGS =10V
VGS = 20V
VGS =10V, ID=1.2A
MIN
600
2.0
2.4
MAX
4.0
100
250
100
4.7
2.0
UNIT
V
V
µA
µA
A
nA
Ω
/W
Si semiconductors 2005.12
1
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Pages | Pages 3 | ||
Télécharger | [ F2N60 ] |
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