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PDF FGW30N120H Data sheet ( Hoja de datos )
| Número de pieza | FGW30N120H | |
| Descripción | Discrete IGBT | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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http://www.fujielectric.com/products/semiconductor/
FGW30N120H
Discrete IGBT
Discrete IGBT (High-Speed V series)
1200V / 30A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Symbols
VCES
VGES
IC@25
IC@100
ICP
-
Short Circuit Withstand Time tSC
Maximum Power Dissipation
PD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics
1200
±20
53
30
90
90
5
260
-40 ~ +175
-55 ~ +175
Units
Remarks
V
V
A TC=25°C, Tj=150°C
A TC=100°C, Tj=150°C
A Note *1
A VCE≤1200V, Tj≤175°C
μs
VCC≤600V, VGE=12V
Tj≤150°C
W TC=25°C
°C
°C
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Thermal resistance characteristics
Symbols
V(BR)CES
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Conditions
IC = 50μA, VGE = 0V
VCE = 1200V, VGE = 0V
Tj=25°C
Tj=175°C
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 30mA
VGE = +15V, IC = 30A
Tj=25°C
Tj=175°C
VCE=25V
VGE=0V
f=1MHz
VCC = 600V
IC = 30A
VGE = 15V
Tj = 25°C
VCC = 600V
IC = 30A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW20S120J) reverse recovery.
Tj = 175°C
VCC = 600V
IC = 30A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW20S120J) reverse recovery.
Items
Thermal Resistance, Junction-Ambient
Thermal Resistance,Junction to Case
Symbols
Rth(j-a)
Rth(j-c)_IGBT
Conditions
-
-
Equivalent circuit
Collector
Gate
Emitter
Characteristics
min. typ. max.
1200
-
-
- - 250
- -2
- - 200
4.0 5.0 6.0
- 1.8 2.34
- 2.3 -
- 2350 -
- 105 -
- 80 -
- 230 -
- 28 -
- 28 -
- 260 -
- 38 -
- 1.6 -
- 1.5 -
- 30 -
- 30 -
- 300 -
- 65 -
- 2.8 -
- 2.5 -
Units
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
Characteristics
min. typ. max.
- - 50
- - 0.568
Units
°C/W
1
1 page  
FGW30N120H
Outline Drawings, mm
Outview : TO-247 Package
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
①② ③
①② ③
CONNECTION
① GATE
② COLLECTOR
③ EMITTER
DIMENSIONS ARE IN MILLIMETERS.
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FGW30N120H.PDF ] | |
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