DataSheetWiki


FGW35N60HD fiches techniques PDF

Fuji Electric - Discrete IGBT

Numéro de référence FGW35N60HD
Description Discrete IGBT
Fabricant Fuji Electric 
Logo Fuji Electric 





1 Page

No Preview Available !





FGW35N60HD fiche technique
http://www.fujielectric.com/products/semiconductor/
FGW35N60HD
Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 35A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Equivalent circuit
Items
Collector-Emitter Voltage
Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Short Circuit Withstand Time
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbols
VCES
VGES
IC@25
IC@100
ICP
-
IF@25
IF@100
IFP
tSC
PD_IGBT
PD_FWD
Tj
Tstg
Characteristics
600
±20
64
35
105
105
30
15
105
5
230
80
-40 ~ +175
-55 ~ +175
Units
Remarks
V
V
A TC=25°C,Tj=150°C
A TC=100°C,Tj=150°C
A Note *1
A VCE≤600V,Tj≤175°C
A
A
A Note *1
µs
VCC≤300V,VGE=12V
Tj≤150°C
W
TC=25°C
TC=25°C
°C
°C
Gate
Collector
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Symbols
V(BR)CES
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Conditions
IC = 250μA, VGE = 0V
VCE = 600V, VGE = 0V
Tj=25°C
Tj=175°C
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 35mA
VGE = +15V, IC = 35A
Tj=25°C
Tj=175°C
VCE=25V
VGE=0V
f=1MHz
VCC = 400V
IC = 35A
VGE = 15V
Tj = 25°C
VCC = 400V
IC = 35A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj = 175°C
VCC = 400V
IC = 35A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Characteristics
min. typ. max.
600 -
-
- - 250
- - 10
- - 200
4.0 5.0 6.0
- 1.50 1.95
- 1.80 -
- 2800 -
- 140 -
- 100 -
- 210 -
- 32 -
- 60 -
- 200 -
- 40 -
- 0.90 -
- 0.85 -
- 33 -
- 60 -
- 225 -
- 50 -
- 1.40 -
- 1.25 -
Units
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
1

PagesPages 8
Télécharger [ FGW35N60HD ]


Fiche technique recommandé

No Description détaillée Fabricant
FGW35N60H Power Devices (IGBT) ETC
ETC
FGW35N60H Discrete IGBT Fuji Electric
Fuji Electric
FGW35N60HD Power Devices (IGBT) ETC
ETC
FGW35N60HD Discrete IGBT Fuji Electric
Fuji Electric

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche