|
|
Numéro de référence | FX50SMJ-06 | ||
Description | HIGH-SPEED SWITCHING USE | ||
Fabricant | Mitsubishi Electric Semiconductor | ||
Logo | |||
PRELIMINARYNSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
FX50SMJ-2
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9 max
4
φ 3.2
Dimensions in mm
4.5
1.5
2
1.0
1 23
5.45 5.45
G
0.6
4.4
2.8
• 4V DRIVE
• VDSS ............................................................. –100V
• rDS (ON) (MAX) ................................................ 50mΩ
• ID .................................................................... –50A
• Integrated Fast Recovery Diode (TYP.) .........100ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
4
3
1 GATE
1 2 DRAIN
3 SOURCE
4 DRAIN
24
TO-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 30µH
Typical value
Conditions
Ratings
–100
±20
–50
–200
–50
–50
–200
150
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
|
|||
Pages | Pages 4 | ||
Télécharger | [ FX50SMJ-06 ] |
No | Description détaillée | Fabricant |
FX50SMJ-03 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
FX50SMJ-03 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |
FX50SMJ-06 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE | Powerex Power Semiconductors |
FX50SMJ-06 | HIGH-SPEED SWITCHING USE | Mitsubishi Electric Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |