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Numéro de référence | LZP60N06 | ||
Description | N-Channel Transistor | ||
Fabricant | LITE-ON | ||
Logo | |||
1 Page
LITE ON LITE-ON
SEMICONDUCTOR
LZP60N06
Features
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• High di/dt Capability
• Improved Gate Charge
• Wide Expanded Safe Operating Area
Application
• DC-DC Converters
• UPS & Monitors
• High Power Swtching
D
G
S
GDS
TO-220
BVDSS = 60V
RDS(on) = 0.016Ω
Typ = 0.014Ω
ID = 60A
Absolute Maximum Ratings ( TC = 25°C Unless Otherwise Specified)
Symbol
Characteristic
VDSS
ID
IDM
VGS
EAS
IAR
Drain-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
(1)
(2)
(1)
EAR Repetitive Avalanche Energy
(1)
dv/dt Peak Diode Recovery dv/dt
(3)
PD
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
TJ, TSTG Operating Junction and Storage Temperature Range
TL
Maximum Lead Temp. for soldering purposes,
1/8" from case for 5-seconds
Value
60
60
43
240
± 20
600
60
12.5
5.5
125
0.83
-55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Characteristic
Junction-to-Case
Junction-to-Case-to-Sink
Junction-to-Ambient
Typ.
Max.
Units
-- 1.2
0.5 -- °C/W
-- 62.5
Rev 0. September. 2006
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Pages | Pages 7 | ||
Télécharger | [ LZP60N06 ] |
No | Description détaillée | Fabricant |
LZP60N06 | N-Channel Transistor | LITE-ON |
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