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Taiwan Semiconductor - 1000V High Efficient Rectifier

Numéro de référence HER408
Description 1000V High Efficient Rectifier
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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HER408 fiche technique
CREAT BY ART
4A, 1000V High Efficient Rectifier
FEATURES
- Negligible leakage sustain the high operation temperature
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
HER408
Taiwan Semiconductor
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
HER408
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
Maximum instantaneous forward voltage (Note 1)
@4A
VF
Maximum reverse current @ rated VR TJ=25 °C
TJ=125 °C
IR
Maximum reverse recovery time (Note 2)
trr
Typical thermal resistance
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
1000
700
1000
4
200
1.7
10
250
75
30
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
°C/W
°C
°C
Document Number: DS_D1412014
Version: A14

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