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IPW60R099CS fiches techniques PDF

Infineon - Power Transistor

Numéro de référence IPW60R099CS
Description Power Transistor
Fabricant Infineon 
Logo Infineon 





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IPW60R099CS fiche technique
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CS is specially designed for:
• Hard switching SMPS topologies
• Zero-voltage switching SMPS topologies
• CCM PFC
Product Summary
V DS
R DS(on),max
Q g,typ
IPW60R099CS
600 V
0.099
60 nC
PG-TO247-3
Type
IPW60R099CS
Package
PG-TO247-3
Ordering Code
Q67045A5060
Marking
6R099
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
Symbol Conditions
ID
I D,pulse
E AS
E AR
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
I AR
dv /dt
V GS
V DS=0...480 V
static
AC (f >1 Hz)
P tot
T j, T stg
T C=25 °C
M3 and M3.5 screws
Value
31
19
93
800
1.2
11
50
±20
±30
255
-55 ... 150
60
Rev. 1.1
page 1
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2005-03-10

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