C185D Datasheet PDF - ETC
| Part Number | C185D | |
| Description | Silicon Controlled Rectifier | |
| Manufacturers | ETC | |
| Logo |  |
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SPEED
!icon Controlled Rectifier
800 Volts
300A RMS
The General Electric C184 and Cl85 Silicon Controlled Rectifiers are de-
signed for power switching at high frequencies. These are all-diffused Pic-
Pac devices, employing the field-proven amplifying gate.
FEATURES:
.. High di/dt Ratings.
.. High dv/dt Capability.
.. Excellent Surge and 12 t Ratings Providing Easy Fusing.
.. Guaranteed Maximum Tum-Off Time with Selections Available.
.. Rugged Hermetic Package with Long Creepage Path.
MAXIMUM ALLOWABLE RATINGS
TYPES
REPETITIVE PEAK OFF-STATE
VOLTAGE, VDRMI
TJ = -40°C to +125°C
C184/C185A
C184/C185B
C184/C185C
C184/C185D
C184/C185E
C184/C185M
C185S
C185N
100 Volts
200
300
400
500
600
700
800
1 Half sinewave waveform, 10 ms max. pulse width.
REPETITIVE PEAK REVERSE
VOLTAGE, VRRM 1
TJ = -40°C to +125°C
100 Volts
200
300
400
500
600
700
800
NON-REPETITIVE PEAK
REVERSE VOLTAGE, VRSM 1
TJ = +125°C
200 Volts
300
400
500
600
720
840
960
RMS On-State Current, IT(RMS) . . • • . . . . . . • • . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . 300 Amperes
Critical Rate-of-Rise of On-State Current, Non-Repetitivet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 800 A/ps
Critical Rate-of-Rise of On-State Current, Repetitivet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . " 500 A/ps
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) . . . . . . . . . . . . . . . . . . . . . . . . 3500 Amperes
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITsM (50 Hz) . . . . . . . . . . . . . . . . . . . . . . . . 3200 Amperes
12 t (for fusing) for times:;;:' 1.5 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35,000 (RMS Ampere? Seconds
12 t (for fusing) for times:;;:' 8.3 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50,000 (RMS Ampere)2 Seconds
Average Gate Power Dissipation, PG(AV) . . . . . . . . . • . • . . . . . . . . . . • . . . . . . . . . • . • . • • . . . . . . . . . . . . . 2 Watts
Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _40°C to +lSO°C
Operating Temperature, TJ • . • • . • • . . . . . . • • . • • • • • . • . • . . . • • • • . . . • • • • . • • • • • • • • • • • . • • -40°C to +l 2SoC
Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 w-In (Max.), 250 Lb-IN (MinJ
34 N-m (Max.), 28 N-m (Min.)
tdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated VDRM; 20 volts,
wo ohms gate trigger source with 0.5/ls short circuit trigger current rise time.
851
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WATT~ECONDPERPULSE
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10 20 30 40 50 60 80 100 200 400 600 000 IK
PULSE BASE WIDTH-MICROSECONDS
di/dl "IOOAMPSI",SEC
,
2K 3K 4K SK 6K aK 10K
8. ENERGY PER PULSE VS. PEAK CURRENT
AND PU LSE WIDTH (di/dt = 100 A//lsec.)
1000
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di/dl = 25 AMPS/",SEC
10
20 30 40 50 60 flO 100
200
400 600 800 IK
PULSE BASE WIDTH-MICROSECONDS
2K 3K 4K Sf( 6K 8K 10K
9. ENERGY PER PULSE VS. PEAK CURRENT
AND PULSE WIDTH (di/dt = 25 AI/lsec.)
1000
600
- r-..~06600
,"-500
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20 30 40 50 60 aD IDa
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400 600 800 IK
PULSE BASE WIDTH-MICROSECONDS
di/dt '" 5 AMPS/p.SEC
,
2K 31< 4K 5K 6K 8l( 10K
10. ENERGY PER PULSE VS. PEAK CURRENT
AND PULSE WIDTH (di/dt = 5 A//lsec.)
855
C184,C185
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| Information | Total 7 Pages | |
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