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Numéro de référence | C184C | ||
Description | Silicon Controlled Rectifier | ||
Fabricant | ETC | ||
Logo | |||
1 Page
SPEED
!icon Controlled Rectifier
800 Volts
300A RMS
The General Electric C184 and Cl85 Silicon Controlled Rectifiers are de-
signed for power switching at high frequencies. These are all-diffused Pic-
Pac devices, employing the field-proven amplifying gate.
FEATURES:
.. High di/dt Ratings.
.. High dv/dt Capability.
.. Excellent Surge and 12 t Ratings Providing Easy Fusing.
.. Guaranteed Maximum Tum-Off Time with Selections Available.
.. Rugged Hermetic Package with Long Creepage Path.
MAXIMUM ALLOWABLE RATINGS
TYPES
REPETITIVE PEAK OFF-STATE
VOLTAGE, VDRMI
TJ = -40°C to +125°C
C184/C185A
C184/C185B
C184/C185C
C184/C185D
C184/C185E
C184/C185M
C185S
C185N
100 Volts
200
300
400
500
600
700
800
1 Half sinewave waveform, 10 ms max. pulse width.
REPETITIVE PEAK REVERSE
VOLTAGE, VRRM 1
TJ = -40°C to +125°C
100 Volts
200
300
400
500
600
700
800
NON-REPETITIVE PEAK
REVERSE VOLTAGE, VRSM 1
TJ = +125°C
200 Volts
300
400
500
600
720
840
960
RMS On-State Current, IT(RMS) . . • • . . . . . . • • . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . 300 Amperes
Critical Rate-of-Rise of On-State Current, Non-Repetitivet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 800 A/ps
Critical Rate-of-Rise of On-State Current, Repetitivet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . " 500 A/ps
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) . . . . . . . . . . . . . . . . . . . . . . . . 3500 Amperes
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITsM (50 Hz) . . . . . . . . . . . . . . . . . . . . . . . . 3200 Amperes
12 t (for fusing) for times:;;:' 1.5 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35,000 (RMS Ampere? Seconds
12 t (for fusing) for times:;;:' 8.3 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50,000 (RMS Ampere)2 Seconds
Average Gate Power Dissipation, PG(AV) . . . . . . . . . • . • . . . . . . . . . . • . . . . . . . . . • . • . • • . . . . . . . . . . . . . 2 Watts
Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _40°C to +lSO°C
Operating Temperature, TJ • . • • . • • . . . . . . • • . • • • • • . • . • . . . • • • • . . . • • • • . • • • • • • • • • • • . • • -40°C to +l 2SoC
Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 w-In (Max.), 250 Lb-IN (MinJ
34 N-m (Max.), 28 N-m (Min.)
tdi/dt ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated VDRM; 20 volts,
wo ohms gate trigger source with 0.5/ls short circuit trigger current rise time.
851
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Pages | Pages 7 | ||
Télécharger | [ C184C ] |
No | Description détaillée | Fabricant |
C184 | Silicon Controlled Rectifier | ETC |
C1841 | NPN Transistor - 2SC1841 | NEC |
C1842 | NPN Silicon Transistor | NEC |
C1844 | NPN SILICON TRANSISTOR | NEC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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