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Panasonic - Silicon N-Channel Power F-MOS FET

Numéro de référence K1803
Description Silicon N-Channel Power F-MOS FET
Fabricant Panasonic 
Logo Panasonic 





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K1803 fiche technique
Power F-MOS FETs
2SK1803
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche capacity guaranteed: EAS > 60mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 80ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
900
±30
±8
±16
60
Allowable power
dissipation
TC = 25°C
Ta = 25°C PD
100
3
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
* L = 1.9mH, IL = 8A, VDD = 50V, 1 pulse
Unit
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
VDS = 720V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 4A
VDS = 25V, ID = 4A
IDR = 8A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 4A
VDD = 200V, RL = 50
15.0±0.3
11.0±0.2
φ3.2±0.1
unit: mm
5.0±0.2
3.2
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1: Gate
2: Drain
3: Source
TOP-3 Full Pack Package (a)
min typ max Unit
0.1 mA
±1 µA
900 V
1 5V
1.3 1.7
3 5.5
S
1.6 V
1800
pF
200 pF
90 pF
100 ns
80 ns
250 ns
1.25 °C/W
1

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