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Numéro de référence | GLT5160L16P-6TC | ||
Description | 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM | ||
Fabricant | ETC | ||
Logo | |||
GLT5160L16
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
ADVANCED
FEATURES
u Single 3.3 V ±0.3 V power supply
u Clock frequency 100 MHz / 125 MHz / 143 MHz/
166 MHz
u Fully synchronous operation referenced to clock rising edge
u Dual bank operation controlled by BA (Bank Address)
u CAS latency- 2 / 3 (programmable)
u Burst length- 1 / 2 / 4 / 8 & Full Page (programmable)
u Burst type- sequential / interleave (programmable)
u Industrial grade available
GENERAL DESCRIPTION
The GLT5160L16 is a 2-bank x 524288-word x 16-bit Synchro-
nous DRAM, with LVTTL interface. All inputs and outputs are
referenced to the rising edge of CLK. The GLT5160L16 achieves
u Byte control by DQMU and DQML
u Column access - random
•u Auto precharge / All bank precharge controlled by A[10]
•u Auto refresh and Self refresh
u 4096 refresh cycles / 64 ms
u LVTTL Interface
u 400-mil, 50-Pin Thin Small Outline Package (TSOP II) with
0.8 mm lead pitch
•u 60-Ball, 6.4mmx10.1mm VFBGA package with 0.65mm Ball
pitch & 0.35mm Ball diameter.
very high speed data rate up to 166 MHz, and is suitable for main
memory or graphic memory in computer systems.
DEC. 2003 (Rev.2.4) 1
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Pages | Pages 30 | ||
Télécharger | [ GLT5160L16P-6TC ] |
No | Description détaillée | Fabricant |
GLT5160L16P-6TC | 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM | ETC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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