|
|
Numéro de référence | C5753 | ||
Description | NPN SILICON RF TRANSISTOR | ||
Fabricant | CEL | ||
Logo | |||
1 Page
NPN SILICON RF TRANSISTOR
NE678M04 / 2SC5753
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
NE678M04-A
2SC5753-A
NE678M04-T2-A
2SC5753-T2-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
9.0
6.0
2.0
100
205
150
65 to +150
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
C
C
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. P15659EJ1V0DS00 (1st edition)
Date Published August 2001 NS CP(K)
|
|||
Pages | Pages 16 | ||
Télécharger | [ C5753 ] |
No | Description détaillée | Fabricant |
C5750 | NPN SILICON RF TRANSISTOR | Renesas |
C5750X5R0J107M | Multilayer Ceramic Chip Capacitors | TDK |
C5750X5R1A107M | Multilayer Ceramic Chip Capacitors | TDK |
C5750X5R1A686M | Multilayer Ceramic Chip Capacitors | TDK |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |