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PDF IKW30N65NL5 Data sheet ( Hoja de datos )
| Número de pieza | IKW30N65NL5 | |
| Descripción | IGBT | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IGBT
LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID2
fastandsoftantiparalleldiode
IKW30N65NL5
650VDuoPackIGBTanddiode
LowVCE(sat)seriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page  
IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
IC=0.40mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=150°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.05 1.35
1.05 -
V
- 1.04 -
-
-
1.65 2.20
1.70 -
V
- 1.68 -
4.2 5.0 5.8 V
-
-
- 40.0
400.0 -
µA
2000.0 -
- - 100 nA
- 65.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=30.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 4600 -
- 64 - pF
- 18 -
- 168.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=10.0Ω,
Lσ=60nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 59 - ns
- 20 - ns
- 283 - ns
- 67 - ns
- 0.56 - mJ
- 1.35 - mJ
- 1.91 - mJ
5 Rev.2.1,2014-12-10
5 Page 
1E+4
Cies
Coes
Cres
1000
100
IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse
0.01
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i: 1 2 3 4 5 6
ri[K/W]: 0.0107 0.15506 0.17294 0.29017 0.02714 2.2E-3
τi[s]: 2.0E-5 2.2E-4 2.0E-3 0.01147 0.09256 1.82712
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse
0.01
0.001
1E-6
i: 1 2 3 4 5 6
ri[K/W]: 0.031494 0.220947 0.291265 0.366808 0.03663 2.3E-3
τi[s]: 2.5E-5 2.1E-4 1.7E-3 0.010113 0.08082 1.811337
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
150
Tvj=25°C,IF=30A
140 Tvj=150°C,IF=30A
130
120
110
100
90
80
70
60
50
40
30
500
1000
1500
2000
2500
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
11 Rev.2.1,2014-12-10
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IKW30N65NL5.PDF ] | |
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