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Toshiba Semiconductor - MOSFET ( Transistor ) - 2SK2733

Numéro de référence K2733
Description MOSFET ( Transistor ) - 2SK2733
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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K2733 fiche technique
2SK2733
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2733
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l Low drainsource ON resistance : RDS (ON) = 8.0 (typ.)
l High forward transfer admittance : |Yfs| = 0.9 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 720 V)
l Enhancementmode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
900
900
±30
1
3
60
324
1
6.0
150
55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
2.08
83.3
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 594 mH, RG = 25 , IAR = 1 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-09-02

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