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RFT300-CC10G1 fiches techniques PDF

REM - LOW-FADE SILICON MOSFET DOSIMETER

Numéro de référence RFT300-CC10G1
Description LOW-FADE SILICON MOSFET DOSIMETER
Fabricant REM 
Logo REM 





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RFT300-CC10G1 fiche technique
REM Data Sheet – RFTDAT-CC10 – Rev W
Type RFT300-CC10G1
REM LOW-FADE SILICON MOSFET DOSIMETER
Two RADFETs, Diode & Capacitor / Lid technology: "glob"
September 2010
A- A'
W=
silicon
chip
8.75 mm
SpaceFET
Copyright
REM 2005
L= A
17
mm
flying lead
6- way
connector;
A' pitch 1.25
mm
1 23
45 6
7
B/S D1 G1 D2 G2 T C
cathode
anode
Copyright REM 2008
REM DOSIMETER SYSTEM:
SpaceFET LAYOUT
file RFTCAR23.PRE Jul 2008 ah-s
Key features
measures ionising radiation doses in the rad to megarad range
applications include
o space and military missions
o high-energy physics experiments
o nuclear power
o radiotherapy
microscopically small sensor volume, measured in cubic micrometres, enables radical new
designs of miniature radiation sensing systems
low-Z epoxy packaging and small silicon chip make a rugged sensor
REM TOT600 chip, mounted on a CC10 carrier is the latest silicon sensor from REM, available in a
variety of encapsulations and sensitivity values. There are several variants but the standard one , normally in stock, is
REM RFT300-CC10G1. This contains a gate oxide of thickness 300nm, has a sensitivity as high as 1.5 mV/cGy and a
package nearly transparent to radiation. It is suitable for many radiation beams and for space.
Designed and Manufactured by
REM Oxford Ltd
64a Acre End St
Eynsham
Oxford
OX29 4PD
England
t.+44 1865 880 050
www.radfet.com
Authorised Sales Representative
Phoenix Semiconductor Limited
46 High Street
Husbands Bosworth
Lutterworth
LE17 6LP
England
t. +44 1858 881 245
www.phoenixsemi.com
REM 2010
1
Technical Notes – by Dr. Andrew Holmes-Sielde (REM Oxford Ltd)
www.radfet.com

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