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Numéro de référence | GL480 | ||
Description | Infrared Emitting Diode | ||
Fabricant | Sharp Electrionic Components | ||
Logo | |||
1 Page
GL480/GL480Q
GL483Q
GL480/GL480Q/GL483Q
Infrared Emitting Diode
s Features
1. Narrow beam angle (∆θ : TYP. ± 13˚)
2. Radiant flux ( Φ e : MIN. 0.7mW at
I F = 20mA )
3. Compact, high reliability by chip coating
(GL480Q/GL483Q )
4. Long lead type (GL483Q )
s Outline Dimensions
GL480/GL480Q
2- C0.5 3.0 ± 0.2
1.15
0.75
(Unit : mm )
Pink transparent
epoxy resin (GL480 )
Transparent
epoxy resin (GL480Q )
R0.8 ± 0.1
1.7
60˚ 0.15 2
s Applications
1. Copiers
2. Floppy disk drives
3. Optoelectronic switches
2.54 2- 0.4
1.6
1
1 Cathode
2 Anode
2.8
12
GL483Q
2 - C0.5 3.0 ± 0.2
1.15
0.75
Transparent
epoxy resin
1.6 ± 0.2
1.7
2
60˚ 0.15
2- 0.6
1
s Absolute Maximum Ratings
(Ta = 25˚C )
Parameter
Power dissipation
Forward current
*1Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2Soldering temperature
Symbol
P
IF
I FM
VR
T opr
T stg
T sol
Rating
75
50
1
6
- 25 to + 85
- 40 to + 85
260
Unit
mW
mA
A
V
˚C
˚C
˚C
*1 Pulse width<=100 µ s, Duty ratio = 0.01
*2 For 3 seconds at the position of 1.4mm from the bottom face of resin package.
2.54
1.6
2 - 0.4
2.8
12
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
1 Cathode
2 Anode
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Pages | Pages 4 | ||
Télécharger | [ GL480 ] |
No | Description détaillée | Fabricant |
GL480 | Infrared Emitting Diode | Sharp Electrionic Components |
GL4800 | Thin Type Infrared Emitting Diode | Sharp Electrionic Components |
GL4800E0000F | Infrared Emitting Diode | Sharp Electrionic Components |
GL480E00000F | Infrared Emitting Diode | Sharp Electrionic Components |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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