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MBRAF2H100G fiches techniques PDF

ON Semiconductor - Surface Mount Schottky Power Rectifier

Numéro de référence MBRAF2H100G
Description Surface Mount Schottky Power Rectifier
Fabricant ON Semiconductor 
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MBRAF2H100G fiche technique
MBRAF2H100T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Low Profile Package for Space Constrained Applications
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
150°C Operating Junction Temperature
GuardRing for Stress Protection
These are PbFree and HalideFree Devices
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERE
100 VOLTS
SMAFL
CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW
RAAG
G
RAA = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBRAF2H100G SMAFL 5000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 Rev. 0
1
Publication Order Number:
MBRAF2H100/D

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