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PDF MBRAF1100T3G Data sheet ( Hoja de datos )
| Número de pieza | MBRAF1100T3G | |
| Descripción | Schottky Power Rectifier | |
| Fabricantes | ON Semiconductor | |
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MBRAF1100T3G
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity
protection diodes, in surface mount applications where compact size
and weight are critical to the system. These state−of−the−art devices
have the following features:
Features
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• High Blocking Voltage − 100 V
• 150°C Operating Junction Temperature
• Guardring for Stress Protection
• This is a Pb−Free Device
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 5000 Units per Reel
• Cathode Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TL = 130°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VVRRWRMM
VR
IF(AV)
IFSM
100
1.0
50
V
A
A
Operating Junction Temperature (Note 1)
TJ −65 to +150 °C
Voltage Rate of Change
dv/dt
10 V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
SMA−FL
CASE 403AA
PLASTIC
STYLE 6
MARKING DIAGRAM
RAD
A
Y
WW
G
AYWW
RADG
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 0
1
Publication Order Number:
MBRAF1100T3/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBRAF1100T3G.PDF ] | |
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