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2SC1008 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Weitron - NPN Plastic-Encapsulate Transistor

شماره قطعه 2SC1008
شرح مفصل NPN Plastic-Encapsulate Transistor
تولید کننده Weitron 
آرم Weitron 


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2SC1008 شرح
WEITRON
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
2SC1008
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
ICM
PCM
TJ
Tstg
Value
80
0.7
0.8
-55 to +150
-55 to +150
Units
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
I CBO
IEBO
hFE
VCE(sat)
Test conditions
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 10µA, IC=0
VCB= 60V, IE=0
VEB= 5V, IC=0
VCE= 2V, IC= 50mA
IC=500mA, IB= 50mA
MIN
80
60
8
40
Base-emitter saturation voltage
Transition Frequency
V BE(sat)
fT
IC=500mA, IB= 50mA
VCE=10V,IC=50mA
30
TYP
MAX
0.1
0.1
400
0.4
1.1
Units
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE
Rank
R
Range
40-80
O
70-140
Y
120-240
G
200-400
WEITRON
hpp://www.weitron.com.tw
1/3
15-Feb-2011

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