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C4905 fiches techniques PDF

Hitachi Semiconductor - Silicon NPN Bipolar Transistor

Numéro de référence C4905
Description Silicon NPN Bipolar Transistor
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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C4905 fiche technique
2SC4905
Silicon NPN Bipolar Transistor
Application
VHF & UHF wide band amplifire
Features
• High gain bandwidth product
fT = 5.8 GHz typ
• High gain, low noise figure
PG = 12.0 dB typ,
NF = 1.6 dB typ at f = 900 MHz
CMPAK
3
1
2
1. Emitter
2. Base
3. Collector
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
20
V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
12
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
2
V
———————————————————————————————————————————
Collector current
IC 50 mA
———————————————————————————————————————————
Collector power dissipation
PC
100 mW
———————————————————————————————————————————
Junction temperature Tj 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————

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