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General Semiconductor - MEDIUM-SWITCHING PLASTIC RECTIFIER

Numéro de référence GI917
Description MEDIUM-SWITCHING PLASTIC RECTIFIER
Fabricant General Semiconductor 
Logo General Semiconductor 





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GI917 fiche technique
GI910 THRU GI917
MEDIUM-SWITCHING PLASTIC RECTIFIER
Reverse Voltage - 50 to 800 Volts Forward Current - 3.0 Amperes
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High surge current capability
Construction utilizes void-free molded plastic technique
High forward current operation
Fast switching for high efficiency
High temperature soldering guaranteed:
250°C/10 seconds, 0.375 (9.5mm) lead length,
5 lbs. (2.3kg) tension
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=90°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at:
3.0A
9.4A, TJ=175°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Typical junction capacitance (NOTE 1)
Maximum reverse recovery time (NOTE 2)
Maximum reverse recovery current
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
CJ
trr
IRM(REC)
RΘJA
RΘJL
TJ ,TSTG
GI910
50
35
50
GI911
100
70
100
GI912
200
140
200
GI914
400
280
400
3.0
100.0
1.25
1.10
10.0
300.0
28.0
750
2.0
22.0
8.0
-50 to +150
GI916
600
420
600
GI917
800
560
800
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µA
pF
ns
Amps
°C/W
°C
NOTES:
(1) Measured at 1 MHz and applied reverse voltage of 4.0 Volts
(2) Reverse recovery test conditions: IF=1.0A, VR=30V, di/dt=50A/µs, and Irr=10% IRM for measurement of trr
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
both leads equally heat sink
4/98

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