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Fairchild Semiconductor - Bridge Rectifiers

Numéro de référence GBU8D
Description Bridge Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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GBU8D fiche technique
GBU8A - GBU8M
Bridge Rectifiers
Features
• Glass passivated junction
• Surge overload rating: 200 amperes peak
• Reliable low cost construction utilizing molded plastic technique.
• Ideal for printed circuit board.
+~~ -
GBU
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
8A 8B 8D 8G 8J
VRRM
VRMS
VR
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated VR)
Average Recitified Forward Current, @ TA = 100°C
@ TA = 45°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
50
35
50
100 200 400 600
70 140 280 420
100 200 400 600
8.0
6.0
200
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
-55 to +150
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
PD
RθJA
RθJC
Power Dissipation
Thermal Resistance, Junction to Ambient, * per leg
Thermal Resistance, Junction to Case, * per leg
* Device mounted on PCB with 0.5 × 0.5” (12 × 12mm).
Value
16
18
3
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
VF Forward Voltage, per element @ 8.0A
IR Reverse Current, per element @ Rated VR
TA = 25°C
TA = 100°C
I2t Rating for Fusing t < 8.35ms
Value
1.0
50
500
166
Units
8K 8M
800 1000
V
560 700
V
800 1000
V
A
A
A
°C
°C
Units
W
°C/W
°C/W
Units
V
µA
µA
A2s
©2004 Fairchild Semiconductor Corporation
GBU8A - GBU8M Rev. 1.4.0
1
www.fairchildsemi.com

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