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Fairchild Semiconductor - 4.0 Ampere Bridge Rectifiers

Numéro de référence GBU4G
Description 4.0 Ampere Bridge Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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GBU4G fiche technique
GBU4A - GBU4M
Features
Surge overload rating: 150 amperes peak.
Reliable low cost construction utilizing
molded plastic technique.
Ideal for printed circuit board.
GBU
4.0 Ampere Bridge Rectifiers
0.125 X 45O
(3.2) Typ
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)
0.080 (2.03)
0.065 (1.65)
0.880 (22.3)
0.860 (21.8)
0.020 R
TYP
0.075 R
(1.9)
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
+
0.085 (2.16)
0.065 (1.65)
+
+ ~~
0.080 (2.03)
0.060 (1.52)
0.050 (1.27)
0.040 (1.02)
Dimensions are in:
inches (mm) 0.210 (5.3)
0.190 (4.8)
0.050 (1.3)
0.040 (1.0)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
IO
if(surge)
PD
RθJA
Tstg
TJ
Parameter
Average Rectified Current
@ TA = 100°C
@ TA = 40°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Storage Temperature Range
Operating Junction Temperature
Value
4.0
3.0
150
6.9
55
19
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5 x 0.5" (12 x 12 mm).
Units
A
A
A
W
mW/°C
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Input Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Leakage, per element
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage Drop, per element
I2t rating for fusing
@ 4.0 A
t < 8.35 ms
4A 4B
50 100
35 70
50 100
Device
4D 4G
200 400
140 280
200 400
4J
600
420
600
5.0
500
1.0
93
Units
4K 4M
800 1000 V
560 700
V
800 1000 V
µA
µA
V
A2Sec
©1999 Fairchild Semiconductor Corporation
GBU4A-GBU4M, Rev. A

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