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Fairchild Semiconductor - 1.0 Ampere Glass Passivated Rectifier

Numéro de référence GBU1K
Description 1.0 Ampere Glass Passivated Rectifier
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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GBU1K fiche technique
Features
Low forward voltage drop.
High current capability.
Easy pick and place.
High surge current capability.
3.93
3.73
1.67
+1.47
GF1A - GF1M
0.062 (1.575)
0.055 (1.397)
2
0.181 (4.597)
0.157 (3.988)
0.208 (5.283)
0.188 (4.775)
SMA/DO-214AC
2.38
2.18
COLOR BAND DENOTES CATHODE
5.49
5.29
Minimum Recommended
Land Pattern
1.0 Ampere Glass Passivated Rectifier
0.060 (1.524) 0.008 (0.203)
0.030 (0.762) 0.002 (0.051)
0.114 (2.896)
1 0.098 (2.489)
0.096 (2.438)
0.078 (1.981)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
IO
if(surge)
PD
RθJA
RθJC
Tstg
TJ
Parameter
Average Rectified Current
@ TL = 125°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
Thermal Resistance, Junction to Case **
Storage Temperature Range
Operating Junction Temperature
Value
1.0
30
2.0
13
80
26
-65 to +175
-65 to +175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas.
Units
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Device
1A 1B 1D 1G
Peak Repetitive Reverse Voltage
50 100 200 400
Maximum RMS Voltage
35 70 140 280
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage @ 1.0 A
50 100 200 400
5.0
50
1.0
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
2.0
15
1J
600
420
600
Units
1K 1M
800 1000
560 800
800 1000
V
V
V
µA
µA
1.2 V
µS
pF
1998 Fairchild Semiconductor International
GF1A-GF1M, Rev. E

PagesPages 4
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