DataSheetWiki


GBPC2501W fiches techniques PDF

Diodes Incorporated - 25A GLASS PASSIVATED BRIDGE RECTIFIER

Numéro de référence GBPC2501W
Description 25A GLASS PASSIVATED BRIDGE RECTIFIER
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





1 Page

No Preview Available !





GBPC2501W fiche technique
GBPC25005/W - GBPC2510/W
25A GLASS PASSIVATED BRIDGE RECTIFIER
Features
· Glass Passivated Die Construction
· Diffused Junction
· Low Reverse Leakage Current
· Low Power Loss, High Efficiency
· Surge Overload Rating to 300A Peak
· Electrically Isolated Metal Base for Maximum
Heat Dissipation
· Case to Terminal Isolation Voltage 1500V
· UL Listed Under Recognized Component
Index, File Number E94661
Mechanical Data
· Case: Molded Plastic with Heatsink Internally
Mounted in the Bridge Encapsulation
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: As Marked on Case
· Mounting: Through Hole for #10 Screw
· Mounting Torque: 8.0 Inch-pounds Maximum
· GBPC Weight: 20 grams (approx.)
· GBPC-W Weight: 14 grams (approx.)
· Mounting Position: Any
GBPC
H
B
E
A
CH
(AC)
J
(-)
(+)
(AC)
CA
G
GBPC-W
H
B
M
L
(AC)
P
(-)
A
PH
(+)
KA
(AC)
GBPC / GBPC-W
Dim Min Max
A
28.30
28.80
B
7.40
8.25
C
16.10
17.10
E
18.80
21.30
G
13.80
14.80
Hole for #10 screw
H
5.08Æ
5.59Æ
J
17.60
18.60
K
10.90
11.90
L
0.97Æ
1.07Æ
M 31.80 ¾
P
17.60
18.60
All Dimensions in mm
“W” Suffix Designates Wire Leads
No Suffix Designates Faston Terminals
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TC = 60°C
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (per element)
@ IF = 12.5A
Peak Reverse Current
at Rated DC Blocking Voltage
I2t Rating for Fusing
@ TC = 25°C
@ TC = 125°C
(Note 1)
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance per leg
(Note 3)
Operating and Storage Temperature Range
Symbol
GBPC25 GBPC25 GBPC25 GBPC25 GBPC25 GBPC25 GBPC25
005/W 01/W 02/W 04/W 06/W 08/W 10/W
Unit
VRRM
VRWM
VR
50
100 200 400 600 800 1000 V
VR(RMS) 35
70 140 280 420 560 700 V
IO 25 A
IFSM 300 A
VFM
IR
I2t
Cj
RqJC
Tj, TSTG
1.1
5.0
500
374
300
1.3
-65 to +150
V
mA
A2s
pF
°C/W
°C
Notes:
1. Non-repetitive, for t > 1.0ms and t < 8.3ms.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case mounted on heatsink.
DS21209 Rev. G-2
1 of 2
GBPC25005/W - GBPC2510/W

PagesPages 2
Télécharger [ GBPC2501W ]


Fiche technique recommandé

No Description détaillée Fabricant
GBPC2501 25A GLASS PASSIVATED BRIDGE RECTIFIER Diodes Incorporated
Diodes Incorporated
GBPC2501 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER General Semiconductor
General Semiconductor
GBPC2501 HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 25 Amperes) Pan Jit International Inc.
Pan Jit International Inc.
GBPC2501 SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Shanghai Sunrise Electronics
Shanghai Sunrise Electronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche