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Dynex Semiconductor - Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

Numéro de référence GP801FSM18
Description Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
Fabricant Dynex Semiconductor 
Logo Dynex Semiconductor 





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GP801FSM18 fiche technique
GP801FSM18
GP801FSM18
Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
DS5401-1.1 January 2001
FEATURES
s Low VCE(SAT)
s 800A Per Switch
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat)
IC
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
800A
1600A
APPLICATIONS
s High Reliability
s Motor Controllers
s Traction Drives
s Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP801FSM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801FSM18
Note: When ordering, please use the complete part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
Aux E
E1
C1
G
E2 C2
Outline type code: F
(See Package Details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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